IPD80R280P7ATMA1
- Mfr.Part #
- IPD80R280P7ATMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
-
IPD80R280P7ATMA1
- Description
- MOSFET N-CH 800V 17A TO252
- Stock
- 10258
- Quality
-
- Social media
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 17A (Tc)
- Drain to Source Voltage (Vdss) :
- 800 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200 pF @ 500 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 101W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 7.2A, 10V
- Supplier Device Package :
- PG-TO252-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 360µA
- Datasheets
- IPD80R280P7ATMA1
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| Express Delivery | Global delivery 3-5 working days. |  |  |
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